Germanium single crystal is germanium crystal with-out large Angle boundary or twin. It is an important semiconductor material with diamond crystal struc-ture. Single crystal germanium is a semiconductor material originally used to make transistors and diodes. In the 1970s, after it was replaced by monocrystalline silicon, germanium turned to infra-red optical applications due to its higher electron and hole mobility than silicon and better perfor-mance than silicon in high-speed switching circuits. Horizontal zone melting is the main method to grow single crystal of germanium used in electronic mate-rials in the past. However, because of the small cross section area of single crystal of germanium, it could not meet the requirements of infrared optics and was eliminated.
Property | Value |
Materials | Ge |
Crystal structure | Cubic |
Lattice parameters | a=5.6575Å |
Melting Point | 937.4°C |
Resistivity | >35Ωcm |
EPD | <1×104/cm2 |
Thickness | 0.5mm,1.0mm |
Polishing | single or double sided |
Crystal orientation | <100>, <110>, <111> |
Crystal plane orientation accuracy | ±0.5° |
Edge orientation accuracy | 2° |
Ra: | ≤5Å |
Property | Value |
Neutron scattering distance | 0.8193b/10-12cm |
Thermal neutron capture interface | 2.2sa/barns |
Density | 5.32g/cm3 |
Molar volume | 13.64cm3 |
Young’s modulus | 79.9GPa |
Modulus of rigidity | 29.6GPa |
Poisson’s ratio | 0.32 |
Isotope | 24 |
Coefficient of thermal conductivity | 59.9 [300K] Wm-1K-1 |
Coefficient of thermal expansion | 5.57×10-6K-1 |
Resistivity | 0.46×10-8[295K]Wm |
Magnetic concentration sensitivity | -1328×10-9(s)kg-1m3 |
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